| Title: |
XPS in-depth characterization of annealed ultra-thin InxAl1-xN layers on GaN for HEMT applications |
| Authors: |
Bourlier, Yoan; Bouttemy, Muriel; Frégnaux, Mathieu; Patard, Olivier; Gamarra, Piero; Piotrowicz, Stéphane; Vigneron, Jackie; Aubry, Raphaël.; Delage, Sylvain; Etcheberry, Arnaud |
| Contributors: |
Institut Lavoisier de Versailles (ILV); Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS); Microelectronic GaN, III-V Lab, Campus Polytechnique, 1, avenue Augustin Fresnel, 91767 Palaiseau Cédex; Alcatel-Thales III-V Lab (III-V Lab); THALES France; Thales Research and Technology Palaiseau |
| Source: |
ECASIA 18th ; https://hal.science/hal-04404063 ; ECASIA 18th, Sep 2019, Dresde, Germany |
| Publisher Information: |
CCSD |
| Publication Year: |
2019 |
| Collection: |
Université de Versailles Saint-Quentin-en-Yvelines: HAL-UVSQ |
| Subject Terms: |
[CHIM]Chemical Sciences |
| Subject Geographic: |
Dresde; Germany |
| Description: |
International audience |
| Document Type: |
conference object |
| Language: |
English |
| Availability: |
https://hal.science/hal-04404063 |
| Accession Number: |
edsbas.B2ECDC1 |
| Database: |
BASE |