| Title: |
Sub-10-nm Tunnel Field-Effect Transistor With Graded Si/Ge Heterojunction |
| Authors: |
Chien, ND |
| Contributors: |
科技學院:電機工程學系; Shih, CH (Shih, Chun-Hsing); Chien, ND(Nguyen Dang Chien) |
| Publisher Information: |
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| Publication Year: |
2011 |
| Collection: |
National Chi Nan University (NCNU) Repository |
| Subject Terms: |
Bandgap engineering; graded Si/Ge heterojunction; short-channel effect; tunnel field-effect transistor (TFET) |
| Description: |
This study presents a new sub-10-nm tunnel field-effect transistor ( TFET) with bandgap engineering using a graded Si/Ge heterojunction. Both the height and width of the tunneling barrier are highly controlled by applying gate voltages to ensure a near ideal sub-5-mV/dec switching of scaled sub-10-nm TFETs at 300 K. This study performed a 2-D simulation to elucidate p-body graded Si/Ge heterojunction TFET devices from 50 to 5 nm. The ON-state tunneling barrier around the source was narrowed and lowered to demonstrate a high ON-current; simultaneously, the OFF-state tunneling barrier was raised and extended into the drain to control the short-channel effect and ambipolar leakage current. The shorter the length is, the more abrupt is the switching. The breakthrough in subthreshold swing and short-channel effect make the graded Si/Ge TFET highly promising as an ideal green transistor into sub-10-nm regimes. ; SCI |
| Document Type: |
article in journal/newspaper |
| File Description: |
106 bytes; text/html |
| Language: |
English |
| Relation: |
IEEE ELECTRON DEVICE LETTERS,32(11): 1498-1500 NOV 2011; http://ir.ncnu.edu.tw:8080/handle/310010000/12529; http://ir.ncnu.edu.tw:8080/bitstream/310010000/12529/1/index.html |
| Availability: |
http://ir.ncnu.edu.tw:8080/handle/310010000/12529; http://ir.ncnu.edu.tw:8080/bitstream/310010000/12529/1/index.html |
| Accession Number: |
edsbas.B36E1BD8 |
| Database: |
BASE |