| Title: |
Structural, Optical and Electrical Characterizations of Midwave Infrared Ga-Free Type-II InAs/InAsSb Superlattice Barrier Photodetector |
| Authors: |
Zavala-Moran, Ulises; Bouschet, Maxime; Perez, Jean-Philippe; Alchaar, Rodolphe; Bernhardt, Sylvie; Ribet-Mohamed, Isabelle; de Anda-Salazar, Francisco; Christol, Philippe |
| Contributors: |
Institut d’Electronique et des Systèmes (IES); Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS); Composants à Nanostructure pour le moyen infrarouge (NANOMIR); Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS); Universidad Autonoma de San Luis Potosi México (UASLP); LYNRED (Veurey-Voroize); DOTA, ONERA, Université Paris Saclay Palaiseau; ONERA-Université Paris-Saclay; ANR-18-CE24-0019,HOT-MWIR,Photodétecteur et matrice de détecteurs à superréseaux "Ga-free" fonctionnant à haute température dans la totalité de la gamme spectrale du moyen infrarouge(2018) |
| Source: |
ISSN: 2304-6732 ; Photonics ; https://hal.science/hal-03042916 ; Photonics, 2020, 7 (3), pp.76. ⟨10.3390/photonics7030076⟩. |
| Publisher Information: |
CCSD; MDPI |
| Publication Year: |
2020 |
| Subject Terms: |
ga-free type-II superlattice; barrier structure; midwave infrared quantum detector; [SPI.TRON]Engineering Sciences [physics]/Electronics; [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics |
| Description: |
International audience ; In this paper, a full set of structural, optical and electrical characterizations performed on midwave infrared barrier detectors based on a Ga-free InAs/InAsSb type-II superlattice, grown by molecular beam epitaxy (MBE) on a GaSb substrate, are reported and analyzed. a Minority carrier lifetime value equal to 1 µs at 80 K, carried out on dedicated structure showing photoluminescence peak position at 4.9 µm, is extracted from a time resolved photoluminescence measurement. Dark current density as low as 3.2 × 10−5 A/cm2 at 150 K is reported on the corresponding device exhibiting a 50% cut-off wavelength around 5 µm. A performance analysis through normalized spectral response and dark current density-voltage characteristics was performed to determine both the operating bias and the different dark current regimes. |
| Document Type: |
article in journal/newspaper |
| Language: |
English |
| DOI: |
10.3390/photonics7030076 |
| Availability: |
https://hal.science/hal-03042916; https://hal.science/hal-03042916v1/document; https://hal.science/hal-03042916v1/file/photonics-07-00076.pdf; https://doi.org/10.3390/photonics7030076 |
| Rights: |
http://creativecommons.org/licenses/by/ ; info:eu-repo/semantics/OpenAccess |
| Accession Number: |
edsbas.B4DEDA34 |
| Database: |
BASE |