| Title: |
In-depth analysis of InAlN/GaN HEMT heterostructure after annealing using angle-resolved X-ray photoelectron spectroscopy |
| Authors: |
Bourlier, Yoan; Bouttemy, Muriel; Frégnaux, Mathieu; Patard, Olivier; Gamarra, Piero; Piotrowicz, Stéphane; Delage, Sylvain Laurent; Etcheberry, A. |
| Contributors: |
Institut Lavoisier de Versailles (ILV); Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS); Alcatel-Thalès III-V lab (III-V Lab); THALES France -ALCATEL; Laboratoire d'informatique de l'École polytechnique Palaiseau (LIX); École polytechnique (X); Institut Polytechnique de Paris (IP Paris)-Institut Polytechnique de Paris (IP Paris)-Centre National de la Recherche Scientifique (CNRS); Alcatel-Thales III-V Lab (III-V Lab); THALES France; Fonds Unique Interministériel, FUI: FUI–AAP 19; This work was carried out in the framework of the VEGaN 2 Project supported by the Fond Unique Interministériel (FUI–AAP 19). |
| Source: |
ISSN: 0142-2421. |
| Publisher Information: |
CCSD; Wiley-Blackwell |
| Publication Year: |
2020 |
| Collection: |
Université de Versailles Saint-Quentin-en-Yvelines: HAL-UVSQ |
| Subject Terms: |
[CHIM.MATE]Chemical Sciences/Material chemistry |
| Description: |
International audience ; During high-electron-mobility transistor elaboration process, a thermal treatment of In0.2Al0.8N (InAlN) barrier layer is performed in order to improve electrical performances. We showed previously that In0.2Al0.8N/GaN heterostructures, annealed at 850°C under O2 partial pressure, present a specific in-depth organization. Angle-resolved X-ray photoelectron spectroscopy is a powerful tool to precisely determine the spatial localization and relative position of the different interfaces, from InAlN until buried GaN layer. The proposed in-depth model of the stack evidences (1) an Al-rich surface oxide with embedded N2 molecules, (2) an interlayer of InAlN |
| Document Type: |
article in journal/newspaper |
| Language: |
English |
| DOI: |
10.1002/sia.6857 |
| Availability: |
https://hal.science/hal-03109152; https://doi.org/10.1002/sia.6857 |
| Accession Number: |
edsbas.B52651DB |
| Database: |
BASE |