| Title: |
Characterization and Modeling of Low-frequency Noise in IGZO Source-Gated Transistors |
| Authors: |
Chen, Qi; Symposium on Schottky Barrier MOS Devices 2025 "Schottky barrier devices at the edge" |
| Contributors: |
UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique |
| Publication Year: |
2025 |
| Collection: |
DIAL@USL-B (Université Saint-Louis, Bruxelles) |
| Document Type: |
conference object |
| Language: |
English |
| Relation: |
boreal:307499; https://hdl.handle.net/2078.1/307499 |
| Availability: |
https://hdl.handle.net/2078.1/307499 |
| Rights: |
info:eu-repo/semantics/openAccess |
| Accession Number: |
edsbas.B6A02A33 |
| Database: |
BASE |