| Title: |
a-Si:H/c-Si Heterojunction Solar Cells on 50 µm Thick Wafers With Rear Point Contacts |
| Authors: |
Amtablian, S; Labrune, M; Carroy, P; Dupuis, J.; Fourmond, E.; Kaminski, A.; Fave, A.; Roca I Cabarrocas, P.; Ribeyron, P-J; Lemiti, M. |
| Contributors: |
INL - Photovoltaïque (INL - PV); Institut des Nanotechnologies de Lyon (INL); École Centrale de Lyon (ECL); Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL); Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon); Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL); Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS); Institut National des Sciences Appliquées de Lyon (INSA Lyon); Université de Lyon-Institut National des Sciences Appliquées (INSA); Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC); Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB Université de Savoie Université de Chambéry )-Centre National de la Recherche Scientifique (CNRS); Laboratoire de Physique des Interfaces et des Couches Minces (LPICM); École polytechnique (X); Institut Polytechnique de Paris (IP Paris)-Institut Polytechnique de Paris (IP Paris)-Centre National de la Recherche Scientifique (CNRS); Institut National de L'Energie Solaire (INES); Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB Université de Savoie Université de Chambéry )-Centre National de la Recherche Scientifique (CNRS) |
| Source: |
23rd European Photovoltaic Solar Energy Conference and Exhibition; https://hal.science/hal-02328386; 23rd European Photovoltaic Solar Energy Conference and Exhibition, Jan 2008, Valencia, Spain |
| Publisher Information: |
CCSD |
| Publication Year: |
2008 |
| Collection: |
Université Savoie Mont Blanc: HAL |
| Subject Terms: |
rear point contacts; a-Si:H/c-Si heterojunction; thin film; Layer transfer process; [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]; [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics |
| Subject Geographic: |
Valencia; Spain |
| Description: |
International audience ; Crystalline silicon thin film processes for thicknesses in the 20-80 µm range are more and more interesting given the issue of silicon shortage. Layer Transfer Processes (LTP) were widely investigated to obtain thin films because of the unavailability of suitable wire sawing. LTP avoids hazardous handling with fragile layers and silicon waste during sawing. In addition, a-Si:H/c-Si heterojunction solar cells are well suited to reduce the photovoltaic power cost. High efficiency on bulk substrate has been demonstrated by Sanyo Corporation and the low temperature process, less than 250 °C, ensures economical gain. In this paper, we present the fabrication of 26 cm 2 solar cells on 50-70 µm thick CZ wafers. The emitter is obtained either by a-Si:H (n +) deposition or by phosphorus diffusion. A 10 % efficiency solar cell on 52 µm thick silicon substrate has been achieved with a-Si:H/c-Si heterojunction. Further improvement is expected with an optimized ITO deposition and a progress in fill factor. Moreover, we also evaluate the effects of rear point contacts obtained by lithography through a dielectric layer. LBIC measurement has been used and a relative 10 % enhancement of photogenerated current has been observed at wavelength 980 nm on no contacted area compared to point contacts area. Moreover defects at the silicon metallization interface can be revealed. Such characterization has been made on 45 µm thick transferred layer. |
| Document Type: |
conference object |
| Language: |
English |
| Availability: |
https://hal.science/hal-02328386; https://hal.science/hal-02328386v1/document; https://hal.science/hal-02328386v1/file/3AV.1.17.pdf |
| Rights: |
info:eu-repo/semantics/OpenAccess |
| Accession Number: |
edsbas.B9DB9193 |
| Database: |
BASE |