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Colossal magnetoresistance and unusual resistivity behaviors in magnetic semiconductors: Mn3Si2Te6 as a case study

Title: Colossal magnetoresistance and unusual resistivity behaviors in magnetic semiconductors: Mn3Si2Te6 as a case study
Authors: Zhihao Liu; Zhong Fang; Hongming Weng; Quansheng Wu
Source: npj Computational Materials, Vol 12, Iss 1 (2026)
Publisher Information: Nature Portfolio
Publication Year: 2026
Collection: Directory of Open Access Journals: DOAJ Articles
Subject Terms: Materials of engineering and construction. Mechanics of materials; TA401-492; Computer software; QA76.75-76.765
Description: Colossal magnetoresistance (CMR) is typically observed in manganites and magnetic semiconductors, marked by a resistivity peak near the magnetic transition temperature that is significantly suppressed by an applied magnetic field, commonly referred to as peak-type CMR. This type of CMR has attracted extensive research efforts over the past decades. However, in some materials such as Mn3Si2Te6, both peak-type and upturn-type CMR coexist—the latter characterized by a sharp resistivity upturn at low temperatures that is also strongly suppressed by an external field. Research on the coexistence of these two types of CMR remains relatively unexplored. In our work, we propose a theoretical framework to unravel the mechanisms underlying the above mentioned CMR phenomenon in magnetic semiconductors, and apply it to the ferrimagnetic semiconductor Mn3Si2Te6. The experimentally observed ρ(B, T) behaviors are accurately reproduced, including the upturn-type CMR, peak-type CMR, and movement of T c (or resistivity peak) with fields. Additionally, the suppression of T c and resistivity with increasing direct currents, possibly associated with current control of the chiral orbital current (COC) state in the previous work, can also be reproduced within our framework by properly accounting for the Joule heating effects. Our work provides a new perspective for quantitatively calculating and analyzing the unusual resistivity responses to temperature, field, and current in magnetic semiconductors.
Document Type: article in journal/newspaper
Language: English
Relation: https://doi.org/10.1038/s41524-026-01963-9; https://doaj.org/toc/2057-3960; https://doaj.org/article/aeb5ff08a4fa4ec19e59d8a231a2ed74
DOI: 10.1038/s41524-026-01963-9
Availability: https://doi.org/10.1038/s41524-026-01963-9; https://doaj.org/article/aeb5ff08a4fa4ec19e59d8a231a2ed74
Accession Number: edsbas.BA4282DC
Database: BASE