| Title: |
About 250/285 GHz push–push oscillator using differential gate equalisation in digital 65‐nm CMOS |
| Authors: |
Fahs, Bassem; Wu, Kefei; Aouimeur, Walid; Mansha, Muhammad Waleed; Gaquière, Christophe; Gamand, Patrice; Knap, Wojciech; Hella, Mona M. |
| Contributors: |
Rensselaer Polytechnic Institute (RPI); Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN); Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF); Puissance - IEMN (PUISSANCE - IEMN); Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF); XLIM (XLIM); Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS); Laboratoire Charles Coulomb (L2C); Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS); ANR-10-LABX-0074,Sigma-LIM,From specific ceramic materials and components to integrated, secured and intelligent communication systems(2010) |
| Source: |
ISSN: 1751-8725. |
| Publisher Information: |
CCSD; Institution of Engineering and Technology |
| Publication Year: |
2019 |
| Collection: |
Université Polytechnique Hauts-de-France: HAL |
| Subject Terms: |
integrated circuit layout; RLC circuits; CMOS digital integrated circuits; skin effect; field effect MIMIC; phase noise; millimetre wave oscillators; [SPI]Engineering Sciences [physics] |
| Description: |
International audience ; This study presents a push-push oscillator architecture based on differential gate equalisation to enhance theoscillation frequency while providing relatively high output power with ultra-compact layout form factor. The frequencyenhancement is derived as a function of the equivalent RLC model of the oscillator's main constituents. The proposed principleis applied to a terahertz oscillator in the 200-300 GHz range to mitigate the excessive substrate and skin effect losses instandard digital 65-nm complementary metal-oxide-semiconductor technology at such high frequencies. The design concept isvalidated using two single-stage push-push oscillators. The first oscillator shows -8.1 dBm output power at 250 GHz oscillationfrequency and -106.8 dBc/Hz phase noise at 10 MHz offset while consuming 76 mW power from 1.5 V DC supply voltage. Thechip area is 200 × 250 μm 2 . The second oscillator provides -14.8 dBm output power at 285 GHz and -106 dBc/Hz phase noiseat 10 MHz offset with 80 mW power consumption from 1.5 V DC supply. The chip area is 200 × 200 μm 2 . |
| Document Type: |
article in journal/newspaper |
| Language: |
English |
| Relation: |
WOS: 000490490300018 |
| DOI: |
10.1049/iet-map.2018.5308 |
| Availability: |
https://hal.science/hal-03133845; https://hal.science/hal-03133845v1/document; https://hal.science/hal-03133845v1/file/Fahs_2019_IET%20Microw.Ant.Prop.pdf; https://doi.org/10.1049/iet-map.2018.5308 |
| Rights: |
info:eu-repo/semantics/OpenAccess |
| Accession Number: |
edsbas.BC46F87B |
| Database: |
BASE |