| Title: |
High Hole Concentration and Diffusion Suppression of Heavily Mg-Doped p-GaN for Application in Enhanced-Mode GaN HEMT |
| Authors: |
Jin-Ji Dai; Thi Thu Mai; Ssu-Kuan Wu; Jing-Rong Peng; Cheng-Wei Liu; Hua-Chiang Wen; Wu-Ching Chou; Han-Chieh Ho; Wei-Fan Wang |
| Source: |
Nanomaterials, Vol 11, Iss 1766, p 1766 (2021) |
| Publisher Information: |
MDPI AG |
| Publication Year: |
2021 |
| Collection: |
Directory of Open Access Journals: DOAJ Articles |
| Subject Terms: |
GaN material; Mg doping; MOCVD; Hall measurement; PL spectroscopy; Chemistry; QD1-999 |
| Description: |
The effect of Mg doping on the electrical and optical properties of the p-GaN/AlGaN structures on a Si substrate grown by metal organic chemical vapor deposition was investigated. The Hall measurement showed that the activation efficiency of the sample with a 450 sccm Cp 2 Mg flow rate reached a maximum value of 2.22%. No reversion of the hole concentration was observed due to the existence of stress in the designed sample structures. This is attributed to the higher Mg-to-Ga incorporation rate resulting from the restriction of self-compensation under compressive strain. In addition, by using an AlN interlayer (IL) at the interface of p-GaN/AlGaN, the activation rate can be further improved after the doping concentration reaches saturation, and the diffusion of Mg atoms can also be effectively suppressed. A high hole concentration of about 1.3 × 10 18 cm −3 can be achieved in the p-GaN/AlN-IL/AlGaN structure. |
| Document Type: |
article in journal/newspaper |
| Language: |
English |
| Relation: |
https://www.mdpi.com/2079-4991/11/7/1766; https://doaj.org/toc/2079-4991; https://doaj.org/article/a8cd7a776808476291d8e78add2dc1af |
| DOI: |
10.3390/nano11071766 |
| Availability: |
https://doi.org/10.3390/nano11071766; https://doaj.org/article/a8cd7a776808476291d8e78add2dc1af |
| Accession Number: |
edsbas.C11E479 |
| Database: |
BASE |