| Title: |
A micro-electro-mechanical accelerometer based on gallium nitride on silicon |
| Authors: |
Morelle, C.; Théron, D.; Roch-Jeune, I.; Tilmant, Pascal; Okada, Etienne; Vaurette, F.; Grimbert, Bertrand; Derluyn, Joff; Degroote, Stefan; Germain, Marianne; Faucher, M. |
| Contributors: |
Nano and Microsystems - IEMN (NAM6 - IEMN); Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN); Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA); Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA); Université catholique de Lille (UCL)-Université catholique de Lille (UCL); Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN); Plateforme de Caractérisation Multi-Physiques - IEMN - RFNET (PCMP - IEMN - RFNET); Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN); Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN); This work has been funded by the French National Agency (ANR) with Project Nos. ASTRID AMGASI ANR-11-ASTR-037 01, NEMSGAN ANR-17-CE09-0036 as well as labex GANEX (ANR-11-LABX-0014) and project “Nanofutur” ANR21-ESRE-0012, these last two belonging to the public funded “Investissements d’Avenir” program. We also thank the Agence de l'innovation de défense and Région Hauts-de-France for the Ph.D. grant financial support. We also thank CPER IMITECH. This work was also supported by the French RENATECH network.; Renatech Network; PCMP CHOP; CMNF; CPER IMITECH; RF-NET; ANR-11-ASTR-0037,AMGaSi,Accéléromètre MEMS en GaN sur Silicium(2011); ANR-17-CE09-0036,NEMS-GAN,Micro et Nano systèmes électromécaniques basés sur le Nitrure de Gallium(2017); ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011); ANR-21-ESRE-0012,NANOFUTUR,Investissements en NANOfabrication pour les nanotechnologies du FUTUR(2021) |
| Source: |
ISSN: 0003-6951. |
| Publisher Information: |
CCSD; American Institute of Physics |
| Publication Year: |
2023 |
| Collection: |
Université Polytechnique Hauts-de-France: HAL |
| Subject Terms: |
Electronic transport; Tensile stress; MEMS technology; Measuring instruments; Semiconductors; Structural beam vibrations; Elastic modulus; Heterostructures; Proof mass; Acceleration measurement; [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics |
| Description: |
International audience ; We report on an accelerometer micro-sensor based on epitaxial gallium nitride and silicon. The device is a vibrating beam accelerometer fabricated with a micro-electro-mechanical-system technology starting from an AlGaN/GaN heterostructure grown on silicon. The vibrating GaN beam has integrated high electron mobility transducers, whereas a high aspect ratio proof mass is engineered in the silicon substrate. The sensor response was investigated for several modes and features a scale factor up to 160 Hz/g, with unconventional dependence vs the mode number. To account for this, we propose an analytical model of the accelerometer scale factor that takes into account the built-in stress during epitaxy. This proof-of-concept device opens perspectives for inertial sensors taking advantage of GaN properties. |
| Document Type: |
article in journal/newspaper |
| Language: |
English |
| DOI: |
10.1063/5.0127987 |
| Availability: |
https://hal.science/hal-03945292; https://hal.science/hal-03945292v1/document; https://hal.science/hal-03945292v1/file/APL22-AR-07980.pdf; https://doi.org/10.1063/5.0127987 |
| Rights: |
https://about.hal.science/hal-authorisation-v1/ ; info:eu-repo/semantics/OpenAccess |
| Accession Number: |
edsbas.C1C8E8A4 |
| Database: |
BASE |