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Highlighting the processing versatility of a silicon phthalocyanine derivative for organic thin-film transistors

Title: Highlighting the processing versatility of a silicon phthalocyanine derivative for organic thin-film transistors
Authors: Cranston, Rosemary R.; King, Benjamin; Dindault, Chloé; Grant, Trevor M.; Rice, Nicole A.; Tonnelé, Claire; Muccioli, Luca; Castet, Frédéric; Swaraj, Sufal; Lessard, Benoît H.
Contributors: Cranston, Rosemary R.; King, Benjamin; Dindault, Chloé; Grant, Trevor M.; Rice, Nicole A.; Tonnelé, Claire; Muccioli, Luca; Castet, Frédéric; Swaraj, Sufal; Lessard, Benoît H.
Publication Year: 2022
Collection: IRIS Università degli Studi di Bologna (CRIS - Current Research Information System)
Subject Terms: organic semiconductors; polymorphs; charge transport; kinetic monte carlo; dft
Description: Silicon phthalocyanine (SiPc) derivatives have recently emerged as promising materials for n-type organic thin-film transistors (OTFTs) with the ability to be fabricated either by solid state or solution processes through axial functionalization. Among those, bis(tri-n-propylsilyl oxide) SiPc ((3PS)2-SiPc) is unique as it can be processed by sublimation, while being soluble enough for solution processing. In this work, the charge transport properties of (3PS)2-SiPc and its polymorphic forms were studied through Kinetic Monte Carlo (KMC) simulations and density functional theory (DFT) calculations along with the characterization of (3PS)2-SiPc in n-type OTFTs fabricated by physical vapour deposition (PVD) and spin coating. Post-deposition thin-film characterization by X-ray diffraction (XRD), atomic force microscopy (AFM), and scanning transmission X-ray microscopy (STXM) was used to assess film morphology and microstructure in relation to the electrical performance of OTFTs. The differences in film formation by PVD and solution fabrication had little effect on OTFT performance with comparable field-effect mobility and threshold voltage ranging between 0.01–0.04 cm2 V−1 s−1 and 18–36 V respectively. Consistent charge transport properties of (3PS)2-SiPc OTFTs achieved at different fabrication conditions highlights the processing versatility of this material.
Document Type: article in journal/newspaper
File Description: ELETTRONICO
Language: English
Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000732846100001; volume:10; issue:2; firstpage:485; lastpage:495; numberofpages:11; journal:JOURNAL OF MATERIALS CHEMISTRY. C; https://hdl.handle.net/11585/850860; https://pubs.rsc.org/en/content/articlelanding/2022/tc/d1tc05238a
DOI: 10.1039/D1TC05238A
Availability: https://hdl.handle.net/11585/850860; https://doi.org/10.1039/D1TC05238A; https://pubs.rsc.org/en/content/articlelanding/2022/tc/d1tc05238a
Rights: info:eu-repo/semantics/openAccess
Accession Number: edsbas.C1FD578F
Database: BASE