| Title: |
A Source-Side Injection Lucky Electron Model for Schottky Barrier Metal-Oxide-Semiconductor Devices |
| Authors: |
Chien, ND |
| Contributors: |
科技學院:電機工程學系; Shih, CH (Shih, Chun-Hsing); Liang, JT (Liang, Ji-Ting); Wang, JS (Wang, Jhong-Sheng); Chien, ND(Chien, Nguyen Dang) |
| Publisher Information: |
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| Publication Year: |
2011 |
| Collection: |
National Chi Nan University (NCNU) Repository |
| Subject Terms: |
FIELD-EFFECT TRANSISTORS; ENHANCEMENT; GATE |
| Description: |
This letter explores source-side injection in Schottky barrier metal-oxide-semiconductor (MOS) devices. Unlike drain-side injection in conventional MOS devices, a source-side lucky electron model predicts the specific source-side injection in Schottky barrier MOS devices. The source-side electric field is derived from the solutions of 2-D Poisson's equations. The conformal-mapping method is used to estimate the gate electrode contribution to determine the source-side injected probability. 2-D device simulations confirm the agreements between the analytical models and the numerical results. This study provides a physical understanding of enhanced source-side injection in new Schottky barrier nonvolatile memory. ; SCI |
| Document Type: |
article in journal/newspaper |
| File Description: |
106 bytes; text/html |
| Language: |
English |
| Relation: |
IEEE ELECTRON DEVICE LETTERS,32(10): 1331-1333 OCT 2011; http://ir.ncnu.edu.tw:8080/handle/310010000/12528; http://ir.ncnu.edu.tw:8080/bitstream/310010000/12528/1/index.html |
| Availability: |
http://ir.ncnu.edu.tw:8080/handle/310010000/12528; http://ir.ncnu.edu.tw:8080/bitstream/310010000/12528/1/index.html |
| Accession Number: |
edsbas.C4692B4E |
| Database: |
BASE |