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Physical properties and optimization of GaBiAs/(Al)GaAs based near-infrared laser diodes grown by MOVPE with up to 4.4% Bi

Title: Physical properties and optimization of GaBiAs/(Al)GaAs based near-infrared laser diodes grown by MOVPE with up to 4.4% Bi
Authors: Marko, I P; Ludewig, P; Bushell, Z L; Jin, S R; Hild, K; Batool, Z; Reinhard, S; Nattermann, L; Stolz, W; Volz, K; Sweeney, S J
Source: Journal of Physics D: Applied Physics ; volume 47, issue 34, page 345103 ; ISSN 0022-3727 1361-6463
Publisher Information: IOP Publishing
Publication Year: 2014
Document Type: article in journal/newspaper
Language: unknown
DOI: 10.1088/0022-3727/47/34/345103
Availability: https://doi.org/10.1088/0022-3727/47/34/345103; http://stacks.iop.org/0022-3727/47/i=34/a=345103/pdf; http://stacks.iop.org/0022-3727/47/i=34/a=345103?key=crossref.65542fc08f61ecfc6706fb8ac6017035
Rights: http://iopscience.iop.org/info/page/text-and-data-mining ; http://iopscience.iop.org/page/copyright
Accession Number: edsbas.C656F2D6
Database: BASE