Development of thermal memory cells on silicon using the floating zero algorithm
| Title: | Development of thermal memory cells on silicon using the floating zero algorithm |
|---|---|
| Authors: | Kulchin, Yury N.; Skvortsov, Arkady A.; Nikolaev, Vladimir K.; Volodina, Olga V. |
| Contributors: | Ministry of Science and Higher Education |
| Source: | Scientific Reports ; volume 15, issue 1 ; ISSN 2045-2322 |
| Publisher Information: | Springer Science and Business Media LLC |
| Publication Year: | 2025 |
| Document Type: | article in journal/newspaper |
| Language: | English |
| DOI: | 10.1038/s41598-025-89566-0 |
| Availability: | https://doi.org/10.1038/s41598-025-89566-0; https://www.nature.com/articles/s41598-025-89566-0.pdf; https://www.nature.com/articles/s41598-025-89566-0 |
| Rights: | https://creativecommons.org/licenses/by-nc-nd/4.0 ; https://creativecommons.org/licenses/by-nc-nd/4.0 |
| Accession Number: | edsbas.C86F12C1 |
| Database: | BASE |