| Title: |
Effect of VN buffer layer on the magnetic anisotropy of epitaxial Ni 80 Fe 20 thin films deposited on MgO (001) substrates |
| Authors: |
Sultan, Muhammad Taha; Tryggvason, Ásgeir; Arnalds, Unnar; Ingvarsson, Snorri |
| Contributors: |
Raunvísindastofnun (HÍ); Science Institute (UI); Verkfræði- og náttúruvísindasvið (HÍ); School of Engineering and Natural Sciences (UI); Háskóli Íslands; University of Iceland |
| Publisher Information: |
IEEE |
| Publication Year: |
2022 |
| Collection: |
Opin vísindi (Iceland) |
| Subject Terms: |
MOKE; Magnetic anisotropy |
| Description: |
This study incorporates the structural and magnetic characterization of epitaxial Ni80Fe20 films grown by direct current magnetron sputtering on MgO(001) and MgO(001)||VN(001) substrates. A series of samples grown with different N2 flow settings for the deposition of VN and similar permalloy deposition parameters was utilized to investigate the effect of morphological evolution and buffer layer induced strain on the magnetic properties of Ni80Fe20. X-ray diffraction analysis reveals an epitaxial nature of the VN(001) and Py(001) films grown on MgO substrates. Angular dependent magneto-optical Kerr effect characterization reveals a cubic anisotropy for Ni80Fe20 on MgO with a coercivity of ∼0.8 Gauss along the easy directions. Incorporating an epitaxial VN buffer, the structures showed a transition from a cubic to isotropic magneto-crystalline anisotropy with coercivity varying from 2.5 to 25 Gauss for Ni80Fe20 deposition on VN (with N2 varying from 5 to 12 sccm). The variation is attributed to the microstructural evolution of the Ni80Fe20 to 3D structures along with an induced structural strain. ; This work was supported by funding from the Icelandic Research Fund Grant Nos. 218029–051, 228951–051 and 207111–051. ; Peer Reviewed |
| Document Type: |
conference object |
| File Description: |
173-176 |
| Language: |
English |
| ISBN: |
978-1-66545-255-7; 1-66545-255-2 |
| Relation: |
International Semiconductor Conference (CAS);2022; http://xplorestaging.ieee.org/ielx7/9933917/9933992/09934537.pdf?arnumber=9934537; https://hdl.handle.net/20.500.11815/3930; International Semiconductor Conference (CAS) |
| DOI: |
10.1109/CAS56377.2022.9934537 |
| Availability: |
https://hdl.handle.net/20.500.11815/3930; https://doi.org/10.1109/CAS56377.2022.9934537 |
| Rights: |
info:eu-repo/semantics/openAccess |
| Accession Number: |
edsbas.CAEAA15A |
| Database: |
BASE |