| Title: |
Influence of phosphorus on the growth and the photoluminescence properties of Si-NCs formed in P-doped SiO/SiO 2 multilayers |
| Authors: |
Trad, Fatme; Giba, Alaa, E; Devaux, Xavier; Stoffel, Mathieu; Zhigunov, Denis; Bouché, Alexandre; Geiskopf, Sébastien; Demoulin, Rémi; Pareige, Philippe; Talbot, Etienne; Vergnat, Michel; Rinnert, Hervé |
| Contributors: |
Institut Jean Lamour (IJL); Institut de Chimie - CNRS Chimie (INC-CNRS)-Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS); National Institute of Laser Enhanced Sciences (NILES); Cairo University; Skolkovo Institute of Science and Technology Moscow (Skoltech); Groupe de physique des matériaux (GPM); Université de Rouen Normandie (UNIROUEN); Normandie Université (NU)-Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie); Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA); Université de Caen Normandie (UNICAEN); Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN); Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN); Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie); Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN); Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN); Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS); ANR-18-CE09-0034,DONNA,Dopage à l'échelle nano(2018); ANR-15-IDEX-0004,LUE,Isite LUE(2015) |
| Source: |
ISSN: 2040-3364. |
| Publisher Information: |
CCSD; Royal Society of Chemistry |
| Publication Year: |
2021 |
| Collection: |
Université de Lorraine: HAL |
| Subject Terms: |
Nanoscale analysis; Phase separation; Doping; Phosphorous; Si nanocrystals; [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic; [SPI.MAT]Engineering Sciences [physics]/Materials; [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]; [CHIM.MATE]Chemical Sciences/Material chemistry |
| Description: |
International audience ; This work reports on the influence of phosphorous atoms on the phase separation process and optical properties of silicon nanocrystals (Si-NCs) embedded in phosphorus doped SiO/SiO 2 multilayers. Doped SiO/SiO 2 multilayers with different P contents have been prepared by coevaporation and subsequently annealed at different temperatures up to 1100 °C. The sample structure and the localization of P atoms were both studied at the nanoscale by scanning transmission electron microscopy and atom probe tomography. It is found that P incorporation modifies the mechanism of Si-NC growth by promoting the phase separation during the postgrowth-annealing step, leading to nanocrystals formation at lower annealing temperatures as Page 38 of 72 Nanoscale compared to undoped Si-NCs. Hence, the maximum of Si-NC related photoluminescence (PL) intensity is achieved for annealing temperatures lower than 900 °C. It is also demonstrated that the Si-NCs mean size increases in the presence of P, which is accompanied by a redshift of the Si-NC related emission. The influence of the phosphorus content on the PL properties is studied using both room temperature and low temperature measurements. It is shown that for a P content lower than about 0.1 at. %, P atoms contribute to significantly improve the PL intensity. This effect is attributed to the P-induced-reduction of the number of non-radiative defects at the interface between Si-NCs and SiO 2 matrix, which is discussed in comparison with hydrogen passivation of Si-NCs. In contrast, for increasing P contents, the PL intensity strongly decreases, which is explained by the growth of Si-NCs reaching sizes that are too large to ensure quantum confinement and to the localization of P atoms inside Si-NCs. |
| Document Type: |
article in journal/newspaper |
| Language: |
English |
| DOI: |
10.1039/D1NR04765E |
| Availability: |
https://hal.science/hal-03457250; https://hal.science/hal-03457250v1/document; https://hal.science/hal-03457250v1/file/manuscript%20DOI%2010.1039D1NR04765E%20.pdf; https://doi.org/10.1039/D1NR04765E |
| Rights: |
https://about.hal.science/hal-authorisation-v1/ ; info:eu-repo/semantics/OpenAccess |
| Accession Number: |
edsbas.CC7B03B5 |
| Database: |
BASE |