| Title: |
Aluminium nitride nanowire array films for nanomanufacturing applications |
| Authors: |
Teker, K. |
| Source: |
Materials Science and Technology ; volume 31, issue 15, page 1832-1836 ; ISSN 0267-0836 1743-2847 |
| Publisher Information: |
SAGE Publications |
| Publication Year: |
2015 |
| Description: |
The present paper presents a systematic investigation of both catalyst free and catalyst assisted AlN nanowire synthesis by chemical vapour deposition using Al and NH 3 as source materials. Growth runs have mostly been carried out at 1100°C under H 2 as carrier gas. While the catalyst free growth runs resulted in long (∼40 μm) and dense AlN nanowire array films, the catalyst assisted growth resulted in short nanowires (3–5 μm). Growth mechanisms have been presented. Raman spectroscopy of the catalyst free grown nanowires has revealed very symmetric and strong phonon modes [e.g. strong E 2 (high)] indicating very good crystal quality of the grown AlN nanowires. In brief, catalyst free growth eliminates catalyst contamination and produces high quality and density of long nanowires, which is very valuable for scale-up manufacturing opportunities of the AlN nanostructures. |
| Document Type: |
article in journal/newspaper |
| Language: |
English |
| DOI: |
10.1179/1743284715y.0000000027 |
| DOI: |
10.1179/1743284715Y.0000000027 |
| Availability: |
https://doi.org/10.1179/1743284715y.0000000027; https://journals.sagepub.com/doi/pdf/10.1179/1743284715Y.0000000027; https://journals.sagepub.com/doi/full-xml/10.1179/1743284715Y.0000000027 |
| Rights: |
https://journals.sagepub.com/page/policies/text-and-data-mining-license |
| Accession Number: |
edsbas.CC9BD3E6 |
| Database: |
BASE |