| Title: |
Strain analysis of SiGe layers on SOI: A tip-enhanced Raman spectroscopy approach for accurate germanium and strain percentage determination |
| Authors: |
La Penna, Giancarlo; Proietti, Anacleto; Mancini, Chiara; Atanasio, Pierfrancesco; Buccini, Luca; Gambacorti, Narciso; Richy, Jérôme; Passeri, Daniele; Rossi, Marco |
| Contributors: |
Università degli Studi di Roma "La Sapienza" = Sapienza University Rome (UNIROMA); Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI); Direction de Recherche Technologique (CEA) (DRT (CEA)); Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA); Département Plate-Forme Technologique (DPFT); Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Technologique (CEA) (DRT (CEA)) |
| Source: |
ICORS 2024 - 28th International Conference on Raman Spectroscopy ; https://cea.hal.science/cea-04770506 ; ICORS 2024 - 28th International Conference on Raman Spectroscopy, Jul 2024, Rome, Italy. 2024 |
| Publisher Information: |
CCSD |
| Publication Year: |
2024 |
| Collection: |
HAL-CEA (Commissariat à l'énergie atomique et aux énergies alternatives) |
| Subject Terms: |
[CHIM.MATE]Chemical Sciences/Material chemistry; [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics |
| Subject Geographic: |
Rome; Italy |
| Description: |
International audience ; In recent years, strained silicon technologies have emerged as a key avenue in semiconductor research, offering a promising way to improve device performance. Among the key players in this field is the integration of silicon-germanium (SiGe) layers onto silicon substrates, which are strategically designed to induce strain and subsequently increase the overall efficiency of strained silicon devices [1].In this work, through a weighted comparison of Raman spectroscopy and high-resolution X-ray diffraction (HR-XRD) measurements with Tip-Enhanced Raman Spectroscopy (TERS) [2] measurements obtained on SiGe changes on SOI at different concentrations and thicknesses, a model was extracted that allows the simultaneous measurement of the percentage of Ge and strain present in nanometric volumes [3]. Furthermore, also the innovative titanium nitride (TiN) AFM probe [4], which allows clean room implementation for in-line characterisation, was used.The results highlight TERS as a powerful tool for monitoring the quality of semiconductor production lines, with unprecedented resolution and speed. |
| Document Type: |
conference object; still image |
| Language: |
English |
| Availability: |
https://cea.hal.science/cea-04770506; https://cea.hal.science/cea-04770506v1/document; https://cea.hal.science/cea-04770506v1/file/ICORS_XXVIII_Abstract_Template_2024_Blanket.pdf |
| Rights: |
info:eu-repo/semantics/OpenAccess |
| Accession Number: |
edsbas.CCB2C006 |
| Database: |
BASE |