| Title: |
Mathematical modeling of semiconductors: from quantum mechanics to devices |
| Authors: |
Kantner, M.; Mielke, A.; Mittnenzweig, M.; Rotundo, N. |
| Contributors: |
Hintermüller, M.; Rodrigues, J.F. |
| Publisher Information: |
Springer |
| Publication Year: |
2019 |
| Collection: |
Max-Delbrueck-Center for Molecular Medicine, Berlin: MDC Repository |
| Description: |
We discuss recent progress in the mathematical modeling of semiconductor devices. The central result of this paper is a combined quantum-classical model that self-consistently couples van Roosbroeck’s drift-diffusion system for classical charge transport with a Lindblad-type quantum master equation. The coupling is shown to obey fundamental principles of non-equilibrium thermodynamics. The appealing thermodynamic properties are shown to arise from the underlying mathematical structure of a damped Hamitlonian system, which is an isothermal version of socalled GENERIC systems. The evolution is governed by a Hamiltonian part and a gradient part involving a Poisson operator and an Onsager operator as geoemtric structures, respectively. Both parts are driven by the conjugate forces given in terms of the derivatives of a suitable free energy. |
| Document Type: |
conference object |
| Language: |
unknown |
| Relation: |
Mathematical modeling of semiconductors: from quantum mechanics to devices. Kantner, M., Mielke, A., Mittnenzweig, M. and Rotundo, N. In: Joint CIM-WIAS Workshop, TAAO 2017, 6-8 Dec 2017, Lisbon, Portugal. 28 November 2019; https://doi.org/10.1007/978-3-030-33116-0_11 |
| DOI: |
10.1007/978-3-030-33116-0_11 |
| Availability: |
https://edoc.mdc-berlin.de/id/eprint/23298/; https://edoc.mdc-berlin.de/23298/; https://doi.org/10.1007/978-3-030-33116-0_11 |
| Accession Number: |
edsbas.D0C9ABFD |
| Database: |
BASE |