| Title: |
Non-planar growth of high Al-mole-fraction AlGaN heterostructures on patterned GaN substrates for ultraviolet laser diodes |
| Authors: |
Ando, Yuto; Xu, Zhiyu; Detchprohm, Theeradetch; Young, Preston; Dupuis, Russell D. |
| Contributors: |
National Science Foundation |
| Source: |
Applied Physics Letters ; volume 123, issue 13 ; ISSN 0003-6951 1077-3118 |
| Publisher Information: |
AIP Publishing |
| Publication Year: |
2023 |
| Description: |
The non-planar growth of UV-A laser diode heterostructures composed of AlGaN layers with high Al-mole-fractions and thicknesses exceeding the critical layer thickness was performed on patterned c-plane GaN (0001) substrates with stripe-shaped mesa structures. This approach suppressed the surface cracking at the top of the mesas via an anisotropic relaxation of the in-plane strain along the direction normal to the mesa stripes. Stimulated emission and laser operation at room temperature with emission in the UV-A range under pulsed current injection were demonstrated for laser diodes fabricated on the mesas. |
| Document Type: |
article in journal/newspaper |
| Language: |
English |
| DOI: |
10.1063/5.0159684 |
| DOI: |
10.1063/5.0159684/18137694/132103_1_5.0159684.pdf |
| Availability: |
https://doi.org/10.1063/5.0159684; https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/5.0159684/18137694/132103_1_5.0159684.pdf |
| Accession Number: |
edsbas.D3C39D8C |
| Database: |
BASE |