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Piezoresistance characterization of silicon nanowires in uniaxial and isostatic pressure variation

Title: Piezoresistance characterization of silicon nanowires in uniaxial and isostatic pressure variation
Authors: Aghabalaei Fakhri, Elham; Plugaru, Rodica; Sultan, Muhammad Taha; Kristinsson, Thorsteinn; Árnason, Hákon Örn; Plugaru, Neculai; Manolescu, Andrei; Ingvarsson, Snorri; Svavarsson, Halldor
Contributors: Department of Engineering (RU); Verkfræðideild (HR); School of Technology (RU); Tæknisvið (HR); Science Institute (UI); Raunvísindastofnun (HÍ); Reykjavik University; Háskólinn í Reykjavík; University of Iceland; Háskóli Íslands
Publisher Information: MDPI AG
Publication Year: 2022
Collection: Opin vísindi (Iceland)
Subject Terms: Electrical and Electronic Engineering; Biochemistry; Instrumentation; Atomic and Molecular Physics; Optics; Analytical Chemistry; Silicon nanowires; MACE; Piezoresistivity; Rafmagnsverkfræði; Rafeindaverkfræði; Lífefnafræði; Tækjafræði; Atómfræði; Sameindafræði; Ljósfræði; Efnafræði; Nanótækni; Kísill
Description: Publisher's version (útgefin grein) ; Silicon nanowires (SiNWs) are known to exhibit a large piezoresistance (PZR) effect, making them suitable for various sensing applications. Here, we report the results of a PZR investigation on randomly distributed and interconnected vertical silicon nanowire arrays as a pressure sensor. The samples were produced from p-type (100) Si wafers using a silver catalyzed top-down etching process. The piezoresistance response of these SiNW arrays was analyzed by measuring their I-V characteristics under applied uniaxial as well as isostatic pressure. The interconnected SiNWs exhibit increased mechanical stability in comparison with separated or periodic nanowires. The repeatability of the fabrication process and statistical distribution of measurements were also tested on several samples from different batches. A sensing resolution down to roughly 1 mbar pressure was observed with uniaxial force application, and more than two orders of magnitude resistance variation were determined for isostatic pressure below atmospheric pressure. ; Reykjavík University ; Peer reviewed
Document Type: article in journal/newspaper
Language: English
Relation: Reykjavik University Ph.D. fund no. 220006; Sensors;22(17); https://www.mdpi.com/1424-8220/22/17/6340/pdf; Fakhri, E.; Plugaru, R.; Sultan, M.T.; Hanning Kristinsson, T.; Örn Árnason, H.; Plugaru, N.; Manolescu, A.; Ingvarsson, S.; Svavarsson, H.G. Piezoresistance Characterization of Silicon Nanowires in Uniaxial and Isostatic Pressure Variation. Sensors 2022, 22, 6340. https://doi.org/10.3390/ s22176340; https://hdl.handle.net/20.500.11815/4023
DOI: 10.3390/s22176340
Availability: https://hdl.handle.net/20.500.11815/4023; https://doi.org/10.3390/s22176340
Rights: info:eu-repo/semantics/openAccess
Accession Number: edsbas.D8FEC297
Database: BASE