| Title: |
Reaction Pathway for Efficient Cu2ZnSnSe4 Solar Cells from Alloyed Cu Sn Precursor via a Cu Rich Selenization Stage |
| Authors: |
Pareek, D.; Taskesen, T.; M rquez, J.A.; Stange, H.; Levcenco, S.; Simsek, I.; Nowak, D.; Pfeiffelmann, T.; Chen, W.; Stroth, C.; Sayed, M.H.; Mikolajczak, U.; Parisi, J.; Unold, T.; Mainz, R.; Gütay, L. |
| Source: |
Solar RRL 4 2020 , p. 2000124 1 8 |
| Publication Year: |
2020 |
| Collection: |
Helmholtz Zentrum Berlin (HZB): Publications |
| Subject Terms: |
CZTSe; Cu2ZnSnSe4; alloyed precursors; selenization; solar cells; in situ EDXRD; in situ XRF |
| Description: |
The selenization of stacked elemental metallic layers Cu Sn Zn is a commonly reported approach in kesterite Cu2ZnSnSe4 CZTSe processing. CZTSe formation via this approach usually involves a reaction route containing binary selenides, such as SnSe2 amp; 8722;x. The high volatility of these phases at the necessary annealing temperatures 500 550 amp; 8201; C makes this reaction pathway prone to Sn loss, which makes it challenging to control the composition and quality of the grown material. Herein, an approach based on stacked elemental and alloyed precursors is reported, and the benefits of using a Zn Cu Sn Zn configuration are discussed. The absence of nonalloyed elemental Sn helps in suppressing the formation and subsequent evaporation of SnSe2 amp; 8722;x phases, preventing Sn loss from the film during selenization. This reaction pathway involves a process scheme which 1 starts with the growth of CZTSe in a Cu amp; 8208;rich environment, 2 includes a shift of the composition by supply of SnSe2 amp; 8722;x vapor, and 3 terminates in the Cu amp; 8208;poor regime, leading to device efficiencies above 10 . This composition shift in the presented process appears similar to the final stage of the commonly known CIGSe three amp; 8208;stage coevaporation |
| Document Type: |
article in journal/newspaper |
| Language: |
unknown |
| Relation: |
info:eu-repo/grantAgreement/EU/H2020/720907 |
| Availability: |
https://www.helmholtz-berlin.de/pubbin/oai_publication?VT=1&ID=102150 |
| Rights: |
info:eu-repo/semantics/openAccess |
| Accession Number: |
edsbas.DA8E753 |
| Database: |
BASE |