| Title: |
Polarization modulation of 2DEG toward plasma-damage-free GaN HEMT isolation |
| Authors: |
Dai, Yijun; Guo, Wei; Chen, Li; Xu, Houqiang; AlQatari, Feras S.; Guo, Chenyu; Peng, Xianchun; Tang, Ke; Liao, Che-Hao; Li, Xiaohang; Ye, Jichun |
| Contributors: |
Advanced Semiconductor Laboratory; Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division; Electrical and Computer Engineering Program; Material Science and Engineering Program; Physical Science and Engineering (PSE) Division; Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, Zhejiang, China; University of Chinese Academy of Sciences, Beijing 100049, China |
| Publisher Information: |
AIP Publishing |
| Publication Year: |
2022 |
| Collection: |
King Abdullah University of Science and Technology: KAUST Repository |
| Description: |
GaN electronics have hinged on invasive isolation such as mesa etching and ion implantation to define device geometry, which, however, suffer from damages, hence potential leakage paths. In this study, we propose a new paradigm of polarization isolation utilizing intrinsic electronic properties, realizing in situ isolation during device epitaxy without the need of post-growth processing. Specifically, adjacent III- and N-polar AlGaN/GaN heterojunctions were grown simultaneously on the patterned AlN nucleation layer on c-plane sapphire substrates. The two-dimensional electron gas (2DEG) was formed at III-polar regions but completely depleted in N-polar regions, thereby isolating the 2DEG channels with a large 3.5 eV barrier. Structures of polarization-isolated high electron mobility transistors (PI-HEMTs) exhibit significantly reduced isolation leakage currents by up to nearly two orders of magnitude at 50 V voltage bias compared to the state-of-the-art results. Aside from that, a high isolation breakdown voltage of 2628 V is demonstrated for the PI-HEMT structure with 3 μm isolation spacing, which is two-times higher than a conventional mesa-isolation HEMT. Moreover, the PI-HEMT device shows a low off-state leakage current of 2 × 10−8 mA/mm with a high Ion/Ioff ratio of 109 and a nearly ideal subthreshold slope of 61 mV/dec. This work demonstrates that polarization isolation is a promising alternative toward the plasma-damage-free isolation for GaN electronics. ; The authors greatly appreciate the support from DUVTEK Co, Ltd. for epitaxial growth. The authors also thank Mr. Weibing Hao and Professor Guangwei Xu of the University of Science and Technology of China for the support in the device breakdown characterization and Ms. Jie Sun for Technical support and the Service Center of Ningbo Institute of Materials Technology and Engineering (NIMTE) for XRD analysis. This work was supported by the Youth Innovation Promotion Association CAS (No. 2020298), the Instrument Developing Project of the Chinese Academy of ... |
| Document Type: |
article in journal/newspaper |
| File Description: |
application/pdf; application/vnd.openxmlformats-officedocument.wordprocessingml.document |
| Language: |
unknown |
| ISSN: |
0003-6951; 1077-3118 |
| Relation: |
Dai, Y., Guo, W., Chen, L., Xu, H., AlQatari, F., Guo, C., Peng, X., Tang, K., Liao, C.-H., Li, X., & Ye, J. (2022). Polarization modulation of 2DEG toward plasma-damage-free GaN HEMT isolation. Applied Physics Letters, 121(1), 012104. https://doi.org/10.1063/5.0097037; Applied Physics Letters; 012104; http://hdl.handle.net/10754/679774; 121 |
| DOI: |
10.1063/5.0097037 |
| Availability: |
http://hdl.handle.net/10754/679774; https://doi.org/10.1063/5.0097037 |
| Rights: |
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Applied Physics Letters and may be found at http://doi.org/10.1063/5.0097037. ; 2023-07-05 |
| Accession Number: |
edsbas.DC5FEE42 |
| Database: |
BASE |