| Title: |
Lattice-matched III-nitride structures comprising BAlN, BGaN, and AlGaN for ultraviolet applications |
| Authors: |
AlQatari, Feras S.; Sajjad, Muhammad; Lin, Ronghui; Li, Kuanghui; Schwingenschlögl, Udo; Li, Xiaohang |
| Contributors: |
Advanced Semiconductor Laboratory; Computational Physics and Materials Science (CPMS); Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division; Electrical and Computer Engineering Program; King Abdullah University of Science and Technology, King Abdullah University of Science and Technology, Building 3, Level 2, Thuwal, 23955, SAUDI ARABIA.; Material Science and Engineering Program; Physical Science and Engineering (PSE) Division |
| Publisher Information: |
IOP Publishing |
| Publication Year: |
2021 |
| Collection: |
King Abdullah University of Science and Technology: KAUST Repository |
| Description: |
The optical properties of BAlN, BGaN and AlGaN ternary alloys are investigated using hybrid density functional for the design of lattice-matched optical structures in the ultraviolet spectrum. The calculated AlGaN properties agree well with previous reports, validating the model. A peculiar non-monotonic behavior of the refractive index as a function of the boron composition is found. The results of this calculation are interpolated to generate a three-dimensional dataset, which can be employed for designing a countless number of lattice-matched and –mismatched heterostructures. These heterostructures could span a range of operating wavelength well into the deep ultraviolet with refractive indices ranging from 1.98 to 2.41 for AlN at 0 eV and GaN near the GaN bandgap, respectively. An example is shown where a lattice-matched heterostructure, AlN/B0.108Ga0.892N, is applied for DBR applications with a large index difference. A DBR comprising the AlN/B0.108Ga0.892N heterostructure at the UV wavelength of 375 nm is found to exceed 93% peak reflectivity with only 10 pairs and reaches 100% reflectivity with 35 pairs. For a chosen design with 25 pairs, the DBR has a peak reflectivity of 99.8% and a bandwidth of 26 nm fulfilling the requirements of most devices especially ultraviolet vertical-cavity surface emitting lasers. ; The authors acknowledge support of KAUST Baseline Fund BAS/1/1664-01-01, Competitive Research Grants URF/1/3437-01-01 and URF/1/3771-01-01, and GCC Research Council REP/1/3189-01-01. |
| Document Type: |
article in journal/newspaper |
| File Description: |
application/pdf |
| Language: |
unknown |
| ISSN: |
2053-1591 |
| Relation: |
https://iopscience.iop.org/article/10.1088/2053-1591/ac1caa; AlQatari, F., Sajjad, M., Lin, R., Li, K., Schwingenschlogl, U., & Li, X. (2021). Lattice-matched III-nitride structures comprising BAlN, BGaN, and AlGaN for ultraviolet applications. Materials Research Express. doi:10.1088/2053-1591/ac1caa; Materials Research Express; http://hdl.handle.net/10754/670624 |
| DOI: |
10.1088/2053-1591/ac1caa |
| Availability: |
http://hdl.handle.net/10754/670624; https://doi.org/10.1088/2053-1591/ac1caa |
| Rights: |
As the Version of Record of this article is going to be/has been published on a gold open access basis under a CC BY 3.0 licence, this Accepted Manuscript is available for reuse under a CC BY 3.0 licence immediately. ; https://creativecommons.org/licences/by/3.0 |
| Accession Number: |
edsbas.DDE23FBA |
| Database: |
BASE |