| Title: |
Bandgap study of quantum dot-sized SiGe alloy nanocrystals prepared in a nonthermal capacitively-coupled plasma by ambient scanning tunneling spectroscopy |
| Authors: |
Uddin, Md Seraj; Khatun, Salma; Vijayan, C.; Rath, J. K.; Sub Algemeen Natuurkunde; Sub Physics of devices begr 1/1/17; Dep Natuurkunde |
| Publication Year: |
2024 |
| Subject Terms: |
Density of states; Midgap defect states; Scanning tunneling spectroscopy; SiGe alloy quantum dots; VHF PECVD; Taverne; Electronic; Optical and Magnetic Materials; Condensed Matter Physics; Electrical and Electronic Engineering |
| Description: |
The manuscript aims to elucidate the evolution of the bandgap and the semiconducting nature of quantum dot-sized SiGe alloy nanocrystals prepared at different plasma conditions in VHF PECVD. The technique of scanning tunneling spectroscopy (STS) is used for this, considering its highly localized nature, and to study the individual NCs. The STS analysis gives the density of states (DOS) spectrum of the SiGe alloy NCs. The present STS study reveals a dependence of the bandgap of SiGe alloy NCs on plasma parameters. The SiGe alloy NCs also exhibited a shallow p-type character despite the fact that no dopants were used during the deposition. Besides this, the midgap defect states are also observed in some of the samples. Further, a comparative bandgap study of the SiGe alloy NCs with its bulk indicates quantum confinement. These new findings from the QD-sized SiGe alloy NCs are important for the conceptual design and practical development of quantum dot-based third-generation solar cells. |
| Document Type: |
article in journal/newspaper |
| File Description: |
text/plain |
| Language: |
English |
| ISSN: |
0921-4526 |
| Relation: |
https://dspace.library.uu.nl/handle/1874/437696 |
| Availability: |
https://dspace.library.uu.nl/handle/1874/437696 |
| Rights: |
info:eu-repo/semantics/OpenAccess |
| Accession Number: |
edsbas.DF124CC5 |
| Database: |
BASE |