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Defective TiO2 with high photoconductive gain for efficient and stable planar heterojunction perovskite solar cells

Title: Defective TiO2 with high photoconductive gain for efficient and stable planar heterojunction perovskite solar cells
Authors: Li, Yanbo; Cooper, Jason K; Liu, Wenjun; Sutter-Fella, Carolin M; Amani, Matin; Beeman, Jeffrey W; Javey, Ali; Ager, Joel W; Liu, Yi; Toma, Francesca M; Sharp, Ian D
Source: Nature Communications, vol 7, iss 1
Publisher Information: eScholarship, University of California
Publication Year: 2017
Collection: University of California: eScholarship
Subject Terms: Engineering; Chemical Sciences; Physical Chemistry
Description: Formation of planar heterojunction perovskite solar cells exhibiting both high efficiency and stability under continuous operation remains a challenge. Here, we show this can be achieved by using a defective TiO2 thin film as the electron transport layer. TiO2 layers with native defects are deposited by electron beam evaporation in an oxygen-deficient environment. Deep-level hole traps are introduced in the TiO2 layers and contribute to a high photoconductive gain and reduced photocatalytic activity. The high photoconductivity of the TiO2 electron transport layer leads to improved efficiency for the fabricated planar devices. A maximum power conversion efficiency of 19.0% and an average PCE of 17.5% are achieved. In addition, the reduced photocatalytic activity of the TiO2 layer leads to enhanced long-term stability for the planar devices. Under continuous operation near the maximum power point, an efficiency of over 15.4% is demonstrated for 100 h.
Document Type: article in journal/newspaper
File Description: application/pdf
Language: unknown
Relation: qt9409m066; https://escholarship.org/uc/item/9409m066; https://escholarship.org/content/qt9409m066/qt9409m066.pdf
DOI: 10.1038/ncomms12446
Availability: https://escholarship.org/uc/item/9409m066; https://escholarship.org/content/qt9409m066/qt9409m066.pdf; https://doi.org/10.1038/ncomms12446
Rights: public
Accession Number: edsbas.E792BC0C
Database: BASE