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Energy quantization in solution-processed layers of indium oxide and their application in resonant tunneling diodes

Title: Energy quantization in solution-processed layers of indium oxide and their application in resonant tunneling diodes
Authors: Labram, JG; Treat, ND; Lin, Y-H; Burgess, CH; McLachlan, MA; Anthopoulos, TD
Contributors: Commission of the European Communities
Source: 1663 ; 1656
Publisher Information: Wiley
Publication Year: 2016
Collection: Imperial College London: Spiral
Subject Terms: Science & Technology; Physical Sciences; Technology; Chemistry; Multidisciplinary; Physical; Nanoscience & Nanotechnology; Materials Science; Physics; Applied; Condensed Matter; Science & Technology - Other Topics; THIN-FILM TRANSISTORS; HETEROSTRUCTURES; INTERFACES; SUPERCONDUCTIVITY; MOBILITY; Materials; 03 Chemical Sciences; 09 Engineering; 02 Physical Sciences
Document Type: article in journal/newspaper
Language: unknown
Relation: Advanced Functional Materials; http://hdl.handle.net/10044/1/32149; http://dx.doi.org/10.1002/adfm.201503732; 280221
DOI: 10.1002/adfm.201503732
Availability: http://hdl.handle.net/10044/1/32149; https://doi.org/10.1002/adfm.201503732
Rights: © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This is the accepted version of the following article: Labram, J. G., Treat, N. D., Lin, Y.-H., Burgess, C. H., McLachlan, M. A. and Anthopoulos, T. D. (2016), Energy Quantization in Solution-Processed Layers of Indium Oxide and Their Application in Resonant Tunneling Diodes. Adv. Funct. Mater., 26: 1656–1663, which has been published in final form at http://dx.doi.org/10.1002/adfm.201503732
Accession Number: edsbas.E84BE3BA
Database: BASE