| Title: |
Hole Injection and Rectifying Heterojunction Photodiodes through Vacancy Engineering in MoS 2 |
| Authors: |
Bhattacharjee, Shubhadeep; Vatsyayan, Ritwik; Ganapathi, Kolla Lakshmi; Ravindra, Pramod; Mohan, Sangeneni; Bhat, Navakanta |
| Contributors: |
Ministry of Electronics and Information technology |
| Source: |
Advanced Electronic Materials ; volume 5, issue 6 ; ISSN 2199-160X 2199-160X |
| Publisher Information: |
Wiley |
| Publication Year: |
2019 |
| Collection: |
Wiley Online Library (Open Access Articles via Crossref) |
| Description: |
The lack of techniques for counter doping in two dimensional (2D) semiconductors has hindered the development of p/n junctions, which are the basic building blocks of electronic devices. In this work, low‐energy argon ions are used to create sulfur vacancies and are subsequently “filled” with oxygen to create p‐doped MoS 2− x O x . The incorporation of oxygen into the MoS 2 lattice and hence band‐structure modification reveal the nature of the p‐type doping. These changes are validated by X‐ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, Raman spectroscopy, and photoluminescence measurements combined with density functional theory calculations. Electrical measurements reveal a complete flip in carrier polarity from n‐type to p‐type, which is further examined using temperature‐dependent transport measurements. The enhancement of p‐field‐effect transistor characteristics is facilitated by employing top‐gated transistors and area‐selective vacancy engineering only in the contact regions. Finally, on the same flake, an in‐plane MoS 2 (n)/MoS 2− x O x (p) type‐I (straddling) heterojunction with rectifying behavior and excellent broadband photoresponse is demonstrated and explained using band diagrams. The spatial/metallurgical abruptness ( |
| Document Type: |
article in journal/newspaper |
| Language: |
English |
| DOI: |
10.1002/aelm.201800863 |
| Availability: |
https://doi.org/10.1002/aelm.201800863; https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Faelm.201800863; https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201800863; https://onlinelibrary.wiley.com/doi/full-xml/10.1002/aelm.201800863 |
| Rights: |
http://onlinelibrary.wiley.com/termsAndConditions#vor |
| Accession Number: |
edsbas.F02BF0A2 |
| Database: |
BASE |