| Title: |
Layer transferred UV emitting hBN/AlGaN heterostructures |
| Authors: |
Perepeliuc, Andre; Kassem, Ali; Gujrati, Rajat; Vuong, Phuong; Ottapilakkal, Vishnu; Tran, Thi May; Srivastava, Ashutosh; Moudakir, Tarik; Voss, Paul, L; Sundaram, Suresh; Salvestrini, Jean Paul; Ougazzaden, Abdallah |
| Contributors: |
Georgia Institute of Technology Atlanta; Georgia Tech Lorraine Metz; Georgia Institute of Technology Atlanta -Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC); Université Bourgogne Franche-Comté COMUE (UBFC)-Université Bourgogne Franche-Comté COMUE (UBFC)-Arts et Métiers Sciences et Technologies; Institut Lafayette; ANR-22-CE51-0009,FLEXIGAN,Croissance sélective de GaN sur hBN structuré pour le transfert de MEMS sur substrats souples(2022); ANR-19-CE08-0025,INMoSt,Cellules solaires multi-jonctions multi-fils à base de nano-pyramides d'InGaN(2019); ANR-24-CE08-3820,BIRD,Dopage photo-induit dans le nitrure de bore hexagonal. Vers la réalisation de nouvelles LED UVC(2024) |
| Source: |
ISSN: 0003-6951. |
| Publisher Information: |
CCSD; American Institute of Physics |
| Publication Year: |
2025 |
| Collection: |
Université de Franche-Comté (UFC): HAL |
| Subject Terms: |
[SPI]Engineering Sciences [physics] |
| Description: |
International audience ; p-hBN/n-AlGaN heterojunctions were fabricated using a dry-selective lift-off/transfer of Mg-doped hexagonal boron nitride (hBN) layer on top of n-AlGaN. Electrical contacts were used as mechanical stressors to provide structural rigidity to hBN layers as well as enabling selective lift-off. These junctions exhibit a rectifying behavior with a rectification ratio of approximately 3 × 105 at 3 V. When junctions were forward biased, ultraviolet (UV) emission around 262 nm was measured. This emission corresponds to recombinations in the n-AlGaN layer, demonstrating good hole injection in the structure. Full light emitting diode (LED) structures were fabricated by integrating UV multi quantum wells (MQWs) into these junctions. Produced UV LEDs emit around 290 nm serving as a proof of concept for future layer transferred p-hBN/MQWs/n-AlGaN structures in which the Al content is increased to go toward deep ultraviolet (DUV) emission. The selective pick and place process used to build these LEDs has multiple advantages. First, it allows independent optimization of the p-side as well as of the n-side, which includes the quantum wells. Second, UV MQWs are protected from the high temperatures needed for high hBN material quality growth, and thus their thermal stability is not affected. |
| Document Type: |
article in journal/newspaper |
| Language: |
English |
| DOI: |
10.1063/5.0257889 |
| Availability: |
https://hal.science/hal-05404810; https://hal.science/hal-05404810v1/document; https://hal.science/hal-05404810v1/file/APL25-AR-00445.pdf; https://doi.org/10.1063/5.0257889 |
| Rights: |
https://creativecommons.org/licenses/by/4.0/ ; info:eu-repo/semantics/OpenAccess |
| Accession Number: |
edsbas.F0F4E218 |
| Database: |
BASE |