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Fabrication of single-electron shuttling channels in a silicon CMOS fab using high-throughput electron beam lithography

Title: Fabrication of single-electron shuttling channels in a silicon CMOS fab using high-throughput electron beam lithography
Authors: Langheinrich, Wolfram; Brackmann, Varvara; Schreiber, Lars R.; Bluhm, Jörg; Friedrich, Michael; Wislicenus, Marcus; Muster, Pascal; Pregl, Sebastian; Reichmann, Felix; Komerički, Nikola; Bougeard, Dominique; Huckemann, Till
Source: SPIE, Proceedings of SPIE 13787, 6 Seiten (2025). doi:10.1117/12.3063352 ; 40th European Mask and Lithography Conference (EMLC 2025) : 16–18 June 2025, Dresden, Germany / Jo Finders, Ines Stolberg Editors ; Organized by VDE/VDI GMM – The Society of Microelectronics, Microsystems, and Precision Engineering (Germany) ; Organized by VDE/VDI GMM – The Society of Microelectronics, Microsystems, and Precision Engineering (Germany) 40. European Mask and Lithography Conference, EMLC 2025, Dresden, Germany, 2025-06-16 - 2025-06-18
Publisher Information: SPIE
Publication Year: 2025
Collection: RWTH Aachen University: RWTH Publications
Subject Geographic: DE
Document Type: conference object
Language: English
ISSN: 1996-756X; 0277-786X
Relation: info:eu-repo/semantics/altIdentifier/isbn/9781510694545; info:eu-repo/semantics/altIdentifier/issn/1996-756X; info:eu-repo/semantics/altIdentifier/wos/WOS:001697778800014; info:eu-repo/semantics/altIdentifier/issn/0277-786X; info:eu-repo/semantics/altIdentifier/isbn/9781510694538
Availability: https://publications.rwth-aachen.de/record/1032493; https://publications.rwth-aachen.de/search?p=id:%22RWTH-2026-03571%22
Rights: info:eu-repo/semantics/closedAccess
Accession Number: edsbas.F210EB4B
Database: BASE