| Title: |
Toward Understanding the Positive Shift of Reverse Turn-on Voltage in the Third Quadrant Operation in Planar SiC Power MOSFETs After Avalanche Breakdown |
| Authors: |
Lin, Wei-Cheng; Hsiao, Yu-Sheng; Sung, Chen; Thị Bích Ngọc, Chu; Kumar, Rustam; Chang, Pei-Jie; Elangovan, Surya; Yeh, Sheng-Shiuan; Hung, Chia-Lung; Hsiao, Yi-Kai; Kuo, Hao-Chung; Tu, Chang-Ching; Wu, Tian-Li |
| Contributors: |
“Advanced Semiconductor Technology Research Center” from The Featured Areas Research Center Program within the framework of the Higher Education Sprout Project; Ministry of Education (MOE) in Taiwan; National Science and Technology Council (NSTC), Taiwan |
| Source: |
IEEE Transactions on Electron Devices ; volume 72, issue 3, page 1270-1275 ; ISSN 0018-9383 1557-9646 |
| Publisher Information: |
Institute of Electrical and Electronics Engineers (IEEE) |
| Publication Year: |
2025 |
| Document Type: |
article in journal/newspaper |
| Language: |
unknown |
| DOI: |
10.1109/ted.2025.3536447 |
| Availability: |
https://doi.org/10.1109/ted.2025.3536447; http://xplorestaging.ieee.org/ielx8/16/10908443/10884917.pdf?arnumber=10884917 |
| Rights: |
https://ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html ; https://doi.org/10.15223/policy-029 ; https://doi.org/10.15223/policy-037 |
| Accession Number: |
edsbas.F41B4DD6 |
| Database: |
BASE |