| Title: |
Photoluminescence Characterization of Inp-Based Hemt Structures |
| Authors: |
Hendriks, Henry T.; Brierley, Steven K.; Hoke, William E.; Pan, Noren |
| Source: |
MRS Proceedings ; volume 324 ; ISSN 0272-9172 1946-4274 |
| Publisher Information: |
Springer Science and Business Media LLC |
| Publication Year: |
1993 |
| Description: |
InP-based lattice matched high electron mobility transistor (HEMT) structures have been characterized by liquid nitrogen temperature photoluminescence. A phenomenological line shape model has been utilized to fit photoluminescence spectra in order to obtain key parameters, such as the subband energies and transition amplitudes. From transition amplitude ratios and subband energies, fundamental quantum well characteristics are inferred. Changes in these parameters are linked to variations in the growth conditions of the epitaxial layer structures. |
| Document Type: |
article in journal/newspaper |
| Language: |
English |
| DOI: |
10.1557/proc-324-211 |
| Availability: |
http://dx.doi.org/10.1557/proc-324-211; https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S1946427400436638 |
| Rights: |
https://www.cambridge.org/core/terms |
| Accession Number: |
edsbas.F6CB49B5 |
| Database: |
BASE |