Physico−mathematical model of the voltage−current characteristics of light-emitting diodes with quantum wells based on the Sah−Noyce−Shockley recombination mechanism
| Title: | Physico−mathematical model of the voltage−current characteristics of light-emitting diodes with quantum wells based on the Sah−Noyce−Shockley recombination mechanism |
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| Authors: | Manyakhin, Fedor I.; Varlamov, Dmitry O.; Krylov, Vladimir P.; Morketsova, Lyudmila O.; Skvortsov, Arkady A.; Nikolaev, Vladimir K. |
| Source: | Journal of Semiconductors ; volume 45, issue 8, page 082102 ; ISSN 1674-4926 2058-6140 |
| Publisher Information: | IOP Publishing |
| Publication Year: | 2024 |
| Description: | Herein, a physical and mathematical model of the voltage−current characteristics of a p−n heterostructure with quantum wells (QWs) is prepared using the Sah−Noyce−Shockley (SNS) recombination mechanism to show the SNS recombination rate of the correction function of the distribution of QWs in the space charge region of diode configuration. A comparison of the model voltage−current characteristics (VCCs) with the experimental ones reveals their adequacy. The technological parameters of the structure of the VCC model are determined experimentally using a nondestructive capacitive approach for determining the impurity distribution profile in the active region of the diode structure with a profile depth resolution of up to 10 Å. The correction function in the expression of the recombination rate shows the possibility of determining the derivative of the VCCs of structures with QWs with a nonideality factor of up to 4. |
| Document Type: | article in journal/newspaper |
| Language: | unknown |
| DOI: | 10.1088/1674-4926/23120044 |
| DOI: | 10.1088/1674-4926/23120044/pdf |
| Availability: | https://doi.org/10.1088/1674-4926/23120044; https://iopscience.iop.org/article/10.1088/1674-4926/23120044; https://iopscience.iop.org/article/10.1088/1674-4926/23120044/pdf |
| Rights: | https://iopscience.iop.org/page/copyright ; https://iopscience.iop.org/info/page/text-and-data-mining |
| Accession Number: | edsbas.F8EF4686 |
| Database: | BASE |