| Title: |
Impurity band formation in doped AlN: A Green’s function approach |
| Authors: |
Billah, Asif; Yoder, P. Douglas |
| Contributors: |
Defense Sciences Office, DARPA |
| Source: |
AIP Advances ; volume 16, issue 4 ; ISSN 2158-3226 |
| Publisher Information: |
AIP Publishing |
| Publication Year: |
2026 |
| Description: |
Using a Green’s function approach, we present a thorough theoretical analysis of impurity band formation in wurtzite aluminum nitride (AlN) for the case of uncompensated n-type doping. A multiple-scattering approach is applied to the calculation of self-energies, correct to first order in the dopant concentration, from which electronic dispersion may be extracted. The unperturbed band structure of AlN is calculated according to a 4×4k·p Hamiltonian, which captures the anisotropy of all bands. Our findings demonstrate the influence of dopant concentration on impurity band dispersion, bandwidth, densities of state, and effective masses for n-type AlN. Without appreciable anisotropy in the conduction band, the observed donor band dispersion in AlN is itself nearly isotropic. To improve the design and functionality of AlN-based electrical and optoelectronic devices, this work offers a qualitative, conceptual foundation for further study of electrical contacting to n-type material and impurity band conduction. |
| Document Type: |
article in journal/newspaper |
| Language: |
English |
| DOI: |
10.1063/5.0306292 |
| DOI: |
10.1063/5.0306292/20960358/045003_1_5.0306292.pdf |
| Availability: |
https://doi.org/10.1063/5.0306292; https://pubs.aip.org/aip/adv/article-pdf/doi/10.1063/5.0306292/20960358/045003_1_5.0306292.pdf |
| Rights: |
https://creativecommons.org/licenses/by/4.0/ |
| Accession Number: |
edsbas.F9F99F09 |
| Database: |
BASE |