| Title: |
Monolithic β-Ga2O3 NMOS IC based on heteroepitaxial E-mode MOSFETs |
| Authors: |
Khandelwal, Vishal; Yuvaraja, Saravanan; García, Glen Isaac Maciel; Wang, Chuanju; Lu, Yi; AlQatari, Feras S.; Li, Xiaohang |
| Contributors: |
Electrical and Computer Engineering Program; Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division; Material Science and Engineering Program; Physical Science and Engineering (PSE) Division |
| Publisher Information: |
AIP Publishing |
| Publication Year: |
2023 |
| Collection: |
King Abdullah University of Science and Technology: KAUST Repository |
| Description: |
In this Letter, we report on a monolithically integrated β-Ga2O3 NMOS inverter integrated circuit (IC) based on heteroepitaxial enhancement mode (E-mode) β-Ga2O3 metal-oxide-semiconductor field-effect transistors on low-cost sapphire substrates. A gate recess technique was employed to deplete the channel for E-mode operation. The E-mode devices showed an on-off ratio of ∼105 with a threshold voltage of 3 V. In comparison, control devices without the gate recess exhibited a depletion mode (D-mode) with a threshold voltage of −3.8 V. Furthermore, depletion-load NMOS inverter ICs were fabricated by monolithically integrating D- and E-mode transistors on the same substrate. These NMOS ICs demonstrated inverter logic operation with a voltage gain of 2.5 at VDD = 9 V, comparable with recent GaN and other wide-bandgap semiconductor-based inverters. This work lays the foundation for heteroepitaxial low-cost and scalable β-Ga2O3 ICs for monolithic integration with (ultra)wide bandgap Ga2O3 power devices. ; The authors are grateful for the funding support of the Baseline Fund (No. BAS/1/1664-01-01), the Near-term Grand Challenge Fund (No. REI/1/4999-01-01), and the Impact Acceleration Fund (No. REI/1/5124-01-01). |
| Document Type: |
article in journal/newspaper |
| File Description: |
application/pdf |
| Language: |
unknown |
| ISSN: |
0003-6951; 1077-3118 |
| Relation: |
Khandelwal, V., Yuvaraja, S., García, G. I. M., Wang, C., Lu, Y., AlQatari, F., & Li, X. (2023). Monolithic β-Ga2O3 NMOS IC based on heteroepitaxial E-mode MOSFETs. Applied Physics Letters, 122(14), 143502. https://doi.org/10.1063/5.0143315; 14; Applied Physics Letters; 143502; http://hdl.handle.net/10754/690976; 122 |
| DOI: |
10.1063/5.0143315 |
| Availability: |
http://hdl.handle.net/10754/690976; https://doi.org/10.1063/5.0143315 |
| Rights: |
Archived with thanks to Applied Physics Letters 2023 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http:// creativecommons.org/licenses/by/4.0/). ; https://creativecommons.org/licenses/by/4.0/ |
| Accession Number: |
edsbas.FAF7538F |
| Database: |
BASE |