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Electronic conduction and superconducting properties of CoSi$_2$ films on silicon--an unconventional superconductor with technological potential

Title: Electronic conduction and superconducting properties of CoSi$_2$ films on silicon--an unconventional superconductor with technological potential
Authors: Chiu, Shao-Pin; Wang, Chang-Jan; Lin, Yi-Chun; Tu, Shun-Tast; Sahu, Shouray; Wang, Ruey-Tay; Wu, Chih-Yuan; Yeh, Sheng-Shiuan; Kirchner, Stefan; Lin, Juhn-Jong
Publication Year: 2024
Collection: ArXiv.org (Cornell University Library)
Subject Terms: Superconductivity; Mesoscale and Nanoscale Physics
Description: We report observations of unusual normal-state electronic conduction properties and superconducting characteristics of high-quality CoSi$_2$/Si films grown on silicon Si(100) and Si(111) substrates. A good understanding of these features shall help to address the underlying physics of the unconventional pairing symmetry recently observed in transparent CoSi$_2$/TiSi$_2$ heterojunctions [S. P. Chiu \textit{et al.}, Sci. Adv. \textbf{7}, eabg6569 (2021); Nanoscale \textbf{15}, 9179 (2023)], where CoSi$_2$/Si is a superconductor with a superconducting transition temperature $T_c \simeq$ (1.1--1.5) K, dependent on its dimensions, and TiSi$_2$ is a normal metal. In CoSi$_2$/Si films, we find a pronounced positive magnetoresistance caused by the weak-antilocalization effect, indicating a strong Rashba spin-orbit coupling (SOC). This SOC generates two-component superconductivity in CoSi$_2$/TiSi$_2$ heterojunctions. The CoSi$_2$/Si films are stable under ambient conditions and have ultralow 1/$f$ noise. Moreover, they can be patterned via the standard lithography techniques, which might be of considerable practical value for future scalable superconducting and quantum device fabrication. ; 15 pages, 12 figures, 2 tables
Document Type: text
Language: unknown
Relation: http://arxiv.org/abs/2401.17601; Chinese Journal of Physics 90, 348 (2024)
DOI: 10.1016/j.cjph.2024.04.018
Availability: http://arxiv.org/abs/2401.17601; https://doi.org/10.1016/j.cjph.2024.04.018
Accession Number: edsbas.FFE20A6F
Database: BASE