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Influence of Pixel Etching on Electrical and Electro-Optical Performances of a Ga-Free InAs/InAsSb T2SL Barrier Photodetector for Mid-Wave Infrared Imaging

Title: Influence of Pixel Etching on Electrical and Electro-Optical Performances of a Ga-Free InAs/InAsSb T2SL Barrier Photodetector for Mid-Wave Infrared Imaging
Authors: Maxime Bouschet; Ulises Zavala-Moran; Vignesh Arounassalame; Rodolphe Alchaar; Clara Bataillon; Isabelle Ribet-Mohamed; Francisco de Anda-Salazar; Jean-Philippe Perez; Nicolas Péré-Laperne; Philippe Christol
Source: Photonics, Vol 8, Iss 6, p 194 (2021)
Publisher Information: MDPI AG, 2021.
Publication Year: 2021
Collection: LCC:Applied optics. Photonics
Subject Terms: mid-wave infrared quantum detector; barrier structure; Ga-free type-II superlattice; pixel etching; Applied optics. Photonics; TA1501-1820
Description: In this paper, the influence of etching depth on the dark current and photo-response of a mid-wave infrared Ga-free T2SL XBn pixel detector is investigated. Two wet chemical etching depths have been considered for the fabrication of a non-passivated individual pixel detector having a cut-off wavelength of 5 µm at 150 K. This study shows the strong influence of the lateral diffusion length of a shallow-etched pixel on the electro-optical properties of the device. The lowest dark current density was recorded for the deep-etched detector, on the order of 1 × 10−5 A/cm2 at 150 K and a bias operation equal to −400 mV. The corresponding quantum efficiency was measured at 60% (without anti-reflection coating) for a 3 µm thick absorbing layer. A comparison of experimental results obtained on the two kinds of etched pixels demonstrates the need for a deep-etching process combined with efficient passivation for FPA manufacturing.
Document Type: article
File Description: electronic resource
Language: English
ISSN: 2304-6732
Relation: https://www.mdpi.com/2304-6732/8/6/194; https://doaj.org/toc/2304-6732
DOI: 10.3390/photonics8060194
Access URL: https://doaj.org/article/342d8ffdbdee4e3cbe85c21cec65d69a
Accession Number: edsdoj.342d8ffdbdee4e3cbe85c21cec65d69a
Database: Directory of Open Access Journals