Using Gate Leakage Conduction to Understand Positive Gate Bias Induced Threshold Voltage Shift in p-GaN Gate HEMTs
| Title: | Using Gate Leakage Conduction to Understand Positive Gate Bias Induced Threshold Voltage Shift in p-GaN Gate HEMTs |
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| Authors: | Tang, S.; Bakeroot, B.; Huang, Z.; Chen, S.; Lin, W.; Lo, T.; Borga, M.; Wellekens, D.; Posthuma, N.; Decoutere, S.; Wu, T. |
| Source: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 70(2):449-453 Feb, 2023 |
| Database: | IEEE Xplore Digital Library |