| Title: |
Forksheet FETs with Bottom Dielectric Isolation, Self-Aligned Gate Cut, and Isolation between Adjacent Source-Drain Structures |
| Authors: |
Mertens, H.; Ritzenthaler, R.; Oniki, Y.; Gowda, P. Puttarame; Mannaert, G.; Sebaai, F.; Hikavyy, A.; Rosseel, E.; Dupuy, E.; Peter, A.; Vandersmissen, K.; Radisic, D.; Briggs, B.; Batuk, D.; Geypen, J.; Martinez-Alanis, G.; Seidel, F.; Richard, O.; Chan, B.T.; Mitard, J.; Litta, E. Dentoni; Horiguchi, N. |
| Source: |
2022 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2022 International. :23.1.1-23.1.4 Dec, 2022 |
| Relation: |
2022 IEEE International Electron Devices Meeting (IEDM) |
| Database: |
IEEE Xplore Digital Library |