3D simulation study of 375V partial SOI SJ LDNMOS BDS limitation
| Title: | 3D simulation study of 375V partial SOI SJ LDNMOS BDS limitation |
|---|---|
| Authors: | Ching Tee, Elizabeth Kho; Antoniou, Marina; Green, David; Holke, Alexander; Udrea, Florin |
| Source: | 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2023 35th International Symposium on. :278-281 May, 2023 |
| Relation: | 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) |
| Database: | IEEE Xplore Digital Library |