Effects of the LPCVD Gate Dielectric Deposition Temperature on GaN MOSFET Channels and the Root Causes at the SiO2-GaN-Interface
| Title: | Effects of the LPCVD Gate Dielectric Deposition Temperature on GaN MOSFET Channels and the Root Causes at the SiO2-GaN-Interface |
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| Authors: | Henn, M.; Huber, C.; Scholten, D.; Kaminski, N. |
| Source: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(3):1553-1560 Mar, 2024 |
| Database: | IEEE Xplore Digital Library |