| Title: |
2.16µm Back Side Illuminated Voltage Domain Global Shutter CMOS Image Sensor with single silicon layer pixel |
| Authors: |
Malinge, P.; Lalanne, F.; Herault, D.; Ferrotti, T.; Simony, L.; Bigault, S.; Favreau, J.; Nassiet, T.; Sacchettini, Y.; Augier, C.; Ricq, S.; Waltz, P.; Brun, F.; Roux, N.; Glais, A.; Roffet, G.; Chua, L.; Duey, J.R.; Tournier, A. |
| Source: |
2023 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2023 International. :1-4 Dec, 2023 |
| Relation: |
2023 International Electron Devices Meeting (IEDM) |
| Database: |
IEEE Xplore Digital Library |