1.2 kV Enhancement-Mode p-GaN Gate HEMTs on 200 mm Engineered Substrates
| Title: | 1.2 kV Enhancement-Mode p-GaN Gate HEMTs on 200 mm Engineered Substrates |
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| Authors: | Kumar, S.; Geens, K.; Vohra, A.; Wellekens, D.; Cingu, D.; Fabris, E.; Cosnier, T.; Hahn, H.; Bakeroot, B.; Posthuma, N.; Langer, R.; Decoutere, S. |
| Source: | IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 45(4):657-660 Apr, 2024 |
| Database: | IEEE Xplore Digital Library |