Positive VTH Shift in Schottky p-GaN Gate Power HEMTs: Dependence on Temperature, Bias and Gate Leakage
| Title: | Positive VTH Shift in Schottky p-GaN Gate Power HEMTs: Dependence on Temperature, Bias and Gate Leakage |
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| Authors: | Modolo, N.; De Santi, C.; Sicre, S.; Minetto, A.; Meneghesso, G.; Zanoni, E.; Meneghini, M. |
| Source: | IEEE Transactions on Power Electronics IEEE Trans. Power Electron. Power Electronics, IEEE Transactions on. 39(6):7045-7051 Jun, 2024 |
| Database: | IEEE Xplore Digital Library |