Systematic Study of the Incorporation of Quantum-Coupling 2-D Materials in the FET Gate/Channel Stack for Steep Subthreshold Slope
| Title: | Systematic Study of the Incorporation of Quantum-Coupling 2-D Materials in the FET Gate/Channel Stack for Steep Subthreshold Slope |
|---|---|
| Authors: | Raju, P.; Xu, H.; Zhu, H.; Ioannou, D.E.; Li, Q. |
| Source: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(5):3135-3141 May, 2024 |
| Database: | IEEE Xplore Digital Library |