Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate
| Title: | Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate |
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| Authors: | Millesimo, M.; Fiegna, C.; Bakeroot, B.; Borga, M.; Posthuma, N.; Decoutere, S.; Sangiorgi, E.; Tallarico, A. N. |
| Source: | 2024 IEEE International Reliability Physics Symposium (IRPS) International Reliability Physics Symposium (IRPS), 2024 IEEE. :1-6 Apr, 2024 |
| Relation: | 2024 IEEE International Reliability Physics Symposium (IRPS) |
| Database: | IEEE Xplore Digital Library |