Toward Understanding the Failure Mechanism in p-GaN Gate HEMTs Operating in Reverse Conduction Diode Mode
| Title: | Toward Understanding the Failure Mechanism in p-GaN Gate HEMTs Operating in Reverse Conduction Diode Mode |
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| Authors: | Lin, W.; Bakeroot, B.; Huang, Z.; Lo, T.; Borga, M.; Wellekens, D.; Posthuma, N.; Decoutere, S.; Wu, T. |
| Source: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(8):4874-4878 Aug, 2024 |
| Database: | IEEE Xplore Digital Library |