Temperature-Dependent ESD Breakdown in AlGaN/GaN HEMTs With Carbon-Doped Buffer
| Title: | Temperature-Dependent ESD Breakdown in AlGaN/GaN HEMTs With Carbon-Doped Buffer |
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| Authors: | Ateeb Munshi, M.; Ashraf Mir, M.; Joshi, V.; Roy Chaudhuri, R.; Malik, R.; Shrivastava, M. |
| Source: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(11):6588-6595 Nov, 2024 |
| Database: | IEEE Xplore Digital Library |