Monolithically Integrated Bidirectional Gate ESD Protection Scheme of p-GaN Power HEMT by Dual-Gate Device Technology
| Title: | Monolithically Integrated Bidirectional Gate ESD Protection Scheme of p-GaN Power HEMT by Dual-Gate Device Technology |
|---|---|
| Authors: | Ma, Y.; Li, S.; Li, M.; Lu, W.; Wang, L.; Ma, J.; Ye, R.; Wei, J.; Zhang, L.; Zhang, C.; Liu, S.; Sun, W. |
| Source: | IEEE Transactions on Power Electronics IEEE Trans. Power Electron. Power Electronics, IEEE Transactions on. 40(2):2721-2725 Feb, 2025 |
| Database: | IEEE Xplore Digital Library |