| Title: |
High-performance Vertical Gate-All-Around Oxide Semiconductor Transistors with 6 nm ALD IGZO Channel and Scaled Contact CD down to 28 nm |
| Authors: |
Zhao, Wanpeng; Cui, Wei; Kang, Lu; Lu, Shiheng; Yuan, Wenqiang; Wang, Heng; Zhan, Shijie; Wang, Yuqi; Yin, Yibiao; Kaneko, Kishou; Xing, Lijuan; Sang, Xia; Shao, Yuan; Lin, Zebin; Shen, Hongguang; Cui, Xiaojuan; Wu, Ying; Xu, Jeffrey |
| Source: |
2024 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2024 IEEE International. :1-4 Dec, 2024 |
| Relation: |
2024 IEEE International Electron Devices Meeting (IEDM) |
| Database: |
IEEE Xplore Digital Library |